? 2016 ixys corporation, all rights reserved IXXH30N65B4D1 v ces = 650v i c110 = 30a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.0v t fi(typ) = 50ns ds100756a(12/16) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab extreme light punch through igbt for 5-30 khz switching features ? optimized for 5-30khz switching ? square rbsoa ? anti-parallel diode ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 20 ? a t j = 150 ? c 750 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 1.66 2.10 v t j = 150 ? c 1.87 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 70 a i c110 t c = 110c 30 a i f110 t c = 110c 40 a i cm t c = 25c, 1ms 146 a ssoa v ge = 15v, t vj = 150c, r g = 15 ? i cm = 60 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 230 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g xpt tm 650v igbt genx4 tm w/ diode advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXH30N65B4D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 1.35 v i rm 14 a t rr 185 ns r thjc 0.75 c/w i f = 30a, v ge = 0v, -di f /dt = 500a/ s, v r = 400v, t j = 150c symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 25 42 s c ie s 1460 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 146 pf c res 22 pf q g(on) 52 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 10 nc q gc 22 nc t d(on) 20 ns t ri 65 ns e on 1.04 mj t d(off) 150 ns t fi 50 ns e of f 0.73 mj t d(on) 19 ns t ri 46 ns e on 1.87 mj t d(off) 146 ns t fi 60 ns e off 1.07 mj r thjc 0.65 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 15 ? note 2 inductive load, t j = 150c i c = 30a, v ge = 15v v ce = 400v, r g = 15 ? note 2 to-247 (ixxh) outline 1 - gate 2,4 - collector 3 - emitter advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2016 ixys corporation, all rights reserved IXXH30N65B4D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 00.511.522.53 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 9v 11v 8v 7v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 12v 8v 9v 14v 7v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 11v 9v 8v 12v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge - volts v ce - volts i c = 60a t j = 25oc 15a 30a fig. 6. input admittance 0 10 20 30 40 50 60 456789101112 v ge - volts i c - amperes t j = - 40oc 25oc t j = 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH30N65B4D1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 102030405060 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 15 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 55 q g - nanocoulombs v ge - volts v ce = 325v i c = 30a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
? 2016 ixys corporation, all rights reserved IXXH30N65B4D1 fig. 12. inductive switching energy loss vs. gate resistance 0.5 1.0 1.5 2.0 2.5 3.0 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 15. inductive turn-off switching times vs. gate resistance 20 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on r g = 15 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on r g = 15 ? ???? v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 16. inductive turn-off switching times vs. collector current 60 80 100 120 140 160 180 200 220 15 20 25 30 35 40 45 50 55 60 i c - amperes t f i - nanoseconds 0 20 40 60 80 100 120 140 160 t d(off) - nanoseconds t f i t d(off) r g = 15 ? ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 17. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 100 110 120 130 140 150 160 170 180 t d(off) - nanoseconds t f i t d(off) r g = 15 ? ? , v ge = 15v v ce = 400v i c = 30a i c = 60a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH30N65B4D1 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 60 i c - amperes t r i - nanoseconds 10 15 20 25 30 35 40 45 50 t d(on) - nanoseconds t r i t d(on) r g = 15 ? ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 0 6 12 18 24 30 36 42 48 54 t d(on) - nanoseconds t r i t d(on) r g = 15 ? ? , v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 400v i c = 30a i c = 60a
? 2016 ixys corporation, all rights reserved ixys ref: ixx_30n65b4(e4-rz43) 10-20-16 IXXH30N65B4D1 fig. 25. dynamic parameters q rr, i rr vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 30a -dif /dt = 600a/s fig. 26. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 21. diode forward characteristics 0 30 60 90 120 150 180 210 240 270 300 00.511.522.533.54 v f (v) i f (a) t j = 150oc t j = 25oc fig. 22. reverse recovery charge vs. -di f /dt 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 500 1000 1500 2000 2500 3000 -di f / dt (a/s) q rr (c) t j = 150oc v r = 400v i f = 60a 30a 15a fig. 23. reverse recovery current vs. -di f /dt 5 10 15 20 25 30 35 40 45 0 500 1000 1500 2000 2500 3000 di f /dt (a/s) i rr (a) t j = 150oc v r = 400v i f = 15a 60a 30a fig. 24. reverse recovery time vs. -di f /dt 0 50 100 150 200 250 300 0 500 1000 1500 2000 2500 3000 -di f /dt (a/s) t rr (ns) t j = 150oc v r = 400v i f = 60a 30a 15a
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